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DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B200Y Microwave power transistor
Product specification Supersedes data of January 1995 1997 Feb 18
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES * Suitable for short and medium pulse applications up to 100 s pulse width, 10% duty factor * Diffused emitter ballasting resistors improve ruggedness * Interdigitated emitter-base structure provides high emitter efficiency * Gold metallization with barrier realizes very stable characteristics and excellent lifetime * Multicell geometry improves power sharing reduces thermal resistance * Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
ok, 4 columns
MX1011B200Y
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common base class C narrowband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 10 s; = 1% f (GHz) 1.09 VCC (V) 50 PL (W) 200 Gp (dB) 7.5 C (%) 45
PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b
3 2 Top view 3
e
MAM045
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VCEO VEBO ICM Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature junction temperature soldering temperature t 10 s; note 1 RBE = 0 open base open collector tp = 10 s; = 1% Tmb < 75 C; tp 10 s; 1% CONDITIONS open emitter
MX1011B200Y
MIN. - - - - - - -65 - -
MAX. 65 65 15 3 11.5 515 +200 200 235
UNIT V V V V A W C C C
handbook, halfpage
600
MLC465
P tot (W) 400
200
0 50 0 50 100 150 200 o T mb ( C)
tp = 10 s; = 1%.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
Microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Zth Notes 1. See "Mounting recommendations in the General part of handbook SC19a". 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO ICES IEBO V(BR)CBO V(BR)CES PARAMETER collector cut-off current collector cut-off current emitter cut-off current collector-base breakdown voltage collector-emitter breakdown voltage CONDITIONS IE = 0; VCB = 50 V VBE = 0; VCE = 50 V IC = 0; VEB = 1.5 V IC = 40 mA IC = 40 mA; VBE = 0 PARAMETER thermal resistance from junction to mounting base thermal impedance from junction to heatsink CONDITIONS Tj = 120 C tp = 10 s; = 1%; notes 1 and 2
MX1011B200Y
MAX. 2.5 0.2 0.16
UNIT K/W K/W K/W
thermal resistance from mounting base to heatsink note 1
MAX. 6 6 1.5 65 65
UNIT mA mA mA V V
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common-base test circuit as shown in Fig.3. MODE OF OPERATION CONDITIONS tp = 10 s; = 1% tp = 0.5 s; = 50% Class C tp = 112 s; = 1% tp = 6.6 s; = 51% tp = 3.3 s; = 43% tp = 32 s; = 1% f (GHz) 1.09 VCC (V) 50 PL (W) 200 typ. 220 typ. 220 typ. 100 typ. 210 Gp (dB) 7.5 typ. 8.3 typ. 7.5 typ. 6 typ. 7.5 C (%) 45 typ. 52 typ. 50 typ. 35 typ. 47
1.03 to 1.09 1.03 to 1.15 1.09
50 50 50
1997 Feb 18
4
Philips Semiconductors
Product specification
Microwave power transistor
MX1011B200Y
handbook, full pagewidth
30
30
19.0
3.0 5.0
3.0
6.0
4.0 2.3
11.5 2.7 2.5
1
40 0.64 10.0
9.5
2.8 0.64 9.5 8.0
40
C3 VCC C4
C2 L1 input L3 output
C1 L2
C5
MLC464
Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: r = 10.
Fig.3 Broadband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
Microwave power transistor
List of components (see Fig.3) COMPONENT C1 C2 C3 C4 C5 L1, L2 L3 capacitor tantalum capacitor electrolytic capacitor feedthrough bypass capacitor variable gigatrim capacitor 0.65 mm copper wire; total length = 26 mm; height of loop = 10 mm 0.85 mm silver wire; total length = 30 mm; height of loop = 15 mm DESCRIPTION VALUE 100 pF 10 F; 50 V 63 V; 1000 F - 0.8 to 8 pF - -
MX1011B200Y
ORDERING INFORMATION ATC 100A101kp50x - - Erie1250-003 Tekelec 729-1 - -
handbook, halfpage
250 PL (W) 230
MLC466
handbook, halfpage
55
MLC467
c (%) 50
210
190 45 170
150 15 25 35 P i (W) 45
40 15 25 35 P i (W) 45
Class C pulse operation. tp = 10 s; = 1%; VCC = 50 V; f = 1.09 GHz. In broadband test circuit as shown in Fig.3.
Class C pulse operation. tp = 10 s; = 1%; VCC = 50 V; f = 1.09 GHz. In broadband test circuit as shown in Fig.3.
Fig.5
Fig.4 Load power as a function of input power.
Collector efficiency as a function of input power.
1997 Feb 18
6
Philips Semiconductors
Product specification
Microwave power transistor
MX1011B200Y
1
handbook, full pagewidth
0.5
2
0.2 Zi +j 0 -j 0.2 0.5
1.03 GHz 1.09 GHz 2 5 10
5 10
1.15 GHz
10
0.2
5
0.5 1 VCC = 50 V; Zo = 10 ; Po = 240 W.
2
MLC468
Fig.6 Input impedance as a function of frequency.
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0 -j 0.2 1.09 GHz 1.15 GHz 1.03 GHz ZL 0.2 5 0.5 2 5 10
10
0.5 1 VCC = 50 V; Zo = 50 ; Po = 240 W.
2
MLC469
Fig.7 Optimum load impedance as a function of frequency.
1997 Feb 18
7
Philips Semiconductors
Product specification
Microwave power transistor
PACKAGE OUTLINE
MX1011B200Y
handbook, full pagewidth
12.85 max 0.15 max 3.3 2.9 3 23 max seating plane 3.7 max 1 2.7 min 6 max 1.6 max
3.3
9.85 max
10.3 10.0
2
MBC881
2.7 min
8.25 16.5
Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm.
Fig.8 SOT439A
1997 Feb 18
8
Philips Semiconductors
Product specification
Microwave power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
MX1011B200Y
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
Microwave power transistor
NOTES
MX1011B200Y
1997 Feb 18
10
Philips Semiconductors
Product specification
Microwave power transistor
NOTES
MX1011B200Y
1997 Feb 18
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127121/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01689

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